N5401 transistor datasheet pdf

Vceo 50 v min, ic 150 ma max excellent hfe linearity. Electronic manufacturer, part no, datasheet, electronics description. Switching time test circuit ic, collector current ma 2. Motorola, inc, 2n5401, amplifier transistorpnp silicon. A1015 datasheet, a1015 pdf, a1015 data sheet, datasheet, data sheet, pdf. The datasheet is printed for reference information only. May 17, 2019 2n5401 datasheet pdf, 2n5401 datasheet, 2n5401 pdf, pinouts, circuit, ic, manual, 2n5401 substitute, parts, 2n5401 datenblatt, schematic, reference. This jedec device number series is available in the do41 axial package, and similar diodes are available in sma and melf surface mount packages in. Choosing transistor replacements when repairing a circuit, or even building a new one it is often not possible to find the exact electronics component we tell you how to choose a suitable replacement. The 1n400x or 1n4001 or 1n4000 series is a family of popular 1 a generalpurpose silicon rectifier diodes commonly used in ac adapters for common household appliances. Vcbo 160v, vceo 150v low collector saturation voltage. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product.

Philips pnp switching transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Toshiba transistor silicon npn epitaxial type pct process. Page 2 of 3 electrical characteristics t ambient25. A1266 datasheet pdf pnp transistor kec, 2sa1266 datasheet, a1266 pdf, a1266 pinout, equivalent, a1266 data, a1266 circuit, output, ic, schematic.

Its blocking voltage varies from 50 volts 1n4001 to volts 1n4007. Pnp tht transistors single bipolar transistors bipolar transistors transistors semiconductors wide offer of products at transfer multisort elektronik. Dec, 2018 a1266 datasheet pdf pnp transistor kec, 2sa1266 datasheet, a1266 pdf, a1266 pinout, equivalent, a1266 data, a1266 circuit, output, ic, schematic. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. Posted on december, 2018 september 10, 2019 by pinout. Click here specifications bipolar transistor transistor polarity. The device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices. Complementary pair with 2n5551 ordering information type no. A selection of the most commonly used transistors and more. Compare pricing for on semiconductor 2n5401 across 11 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Motorola smallsignal transistors, fets and diodes device data. Aah 20090112 mmbt5401 smd high voltage transistor pnp. Philips, alldatasheet, datasheet, datasheet search site for electronic components. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current.

Bc327 pnp epitaxial silicon transistor mouser electronics. General purpose plastic rectifier vishay intertechnology. N5401 datasheet, n5401 pdf, n5401 data sheet, n5401 manual, n5401 pdf, n5401, datenblatt, electronics n5401, alldatasheet, free, datasheet, datasheets, data sheet. Choosing transistor replacements electronics notes. F4558 interior includes two independent, high gain, internally frequency compensated dual operational amplifier suitable for a wide range of supply voltage singlesupply enable. Use, also applies to dual power mode, the recommended working conditions, supply current and supply voltage has nothing to do. Samsung pnp epitaxial silicon transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Datasheet contains the design specifications for product development. Pnp general purpose amplifier this device is designed as a general purpose amplifier and switch for applications requiring high voltages. Please consult the most recently issued document before initiating or completing a design. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or. Applications general purpose switching and amplification telephony applications description pnp highvoltage transistor to92. Transistor silicon pnp epitaxial type pct process audio frequency general.

Discrete semiconductors data sheet book, halfpage m3d186 2n5401 pnp highvoltage transistor 1999 apr 08 product specification supersedes data of 1997 may 22 philips semiconductors product specification pnp highvoltage transistor 2n5401 features pinning low current max. Home t transistors 2n5401 pnp transistor 150v 600ma. This datasheet contains the design specifications for. Jameco will remove tariff surcharges for online orders on instock items learn more. Pnp highvoltage transistor, 2n5401 datasheet, 2n5401 circuit, 2n5401 data sheet. The 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Amplifier transistors npn silicon features these are pb. Pnp switching transistor nxp semiconductors your require pages is cannot. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Free devices maximum ratings rating symbol value unit collector. Philips pnp highvoltage transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Pnp silicon transistor description general purpose amplifier high voltage application features high collector breakdown voltage. The tip32c is a silicon epitaxialbase pnp power transistor in jedec to220 plastic package. Description amplifier transistor pnp silicon download 6 pages. Applications general purpose switching and amplification telephony applications. This device is designed as a general purpose amplifier and switch for applications requiring high voltages vceo vcbo vebo ic tj, tstg collectorbase voltage emitterbase voltage collector current continuous collectoremitter voltage. Pnp silicon af power transistor drain switch for rf power amplifier stages for af driver and output stages.

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